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| VISHAY TSKS5400-FSZ Vishay Semiconductors GaAs Infrared Emitting Diode in Side View Package Description TSKS5400-FSZ is a standard GaAs infrared emitting diode in a flat sideview molded plastic package. A small recessed spherical lens provides an improved radiant intensity in a low profile case. The diode is case compatible to the TEKS5400 photodetector, allowing the user to assemble his own optical sensor. 14 354 Features * Side view package with spherical lens * Radiation direction perpendicular to mounting direction * Angle of half sensitivity = 30 * Peak wavelength P = 950 nm * Case compatible with TEKS5400 * Lead-free device Parts Table Part TSKS5400-FSZ Type differentiation 2.54 mm Pin distance (lead to lead) Remarks Height of taping 27 mm Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Parameter Reverse voltage Forward current Surge forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ ambient t 5 s, 2 mm from body tp 100 s Test condition Symbol VR IF IFSM PV Tj Tstg Tstg Tsd RthJA Value 6 100 2 170 100 - 25 to + 85 - 40 to + 100 260 450 Unit V mA A mW C C C C k/W Basic Characteristics Tamb = 25 C, unless otherwise specified Parameter Forward voltage Reverse voltage Junction capacitance Radiant intensity Radiant power Temp. coefficient of e Test condition IF = 100 mA, tp 20 ms IR = 10 A VR =0 V, f = 1 MHz, E = 0 IF = 50 mA, tp 20 ms IF = 50 mA, tp 20 ms IF = 50 mA Symbol VF VVR Cj Ie e TKe 2 10 -0.8 6 30 7 Min Typ. 1.3 Max 1.7 Unit V V pF mW/ sr mW %K Document Number 83780 Rev. 2.0, 19-Jan-04 www.vishay.com 1 TSKS5400-FSZ Vishay Semiconductors Parameter Angle of half sensitivity Peak wavelength Spectral bandwidth Rise time Fall time IF = 50 mA IF = 50 mA IF = 1 A, tp/T = 0.01, tp 10 s IF = 1 A, tp/T = 0.01, tp 10 s Test condition Symbol p tr tf Min Typ. 30 950 50 400 450 Max VISHAY Unit nm nm ns ns Typical Characteristics (Tamb = 25 C unless otherwise specified) 200 P V - Power Dissipation ( mW ) I F - Forward Current ( mA ) 10 4 10 3 10 2 10 1 10 0 10 -1 0 94 7996 150 R thJA 100 50 0 14846 0 20 40 60 80 100 Tamb - Ambient Temperature ( C ) 1 2 3 4 V F - Forward Voltage ( V ) Figure 1. Power Dissipation vs. Ambient Temperature Figure 3. Forward Current vs. Forward Voltage 125 I F - Forward Current ( mA ) 1.5 100 75 50 25 0 0 20 40 60 80 100 R thJA V Frel - Relative Forward Voltage 1.4 1.3 1.2 1.1 1.0 0.9 I F = 10 mA 14847 Tamb - Ambient Temperature ( C ) 14347 0.8 -45 -30 -15 0 15 30 45 60 75 90 Tamb - Ambient Temperature ( C ) Figure 2. Forward Current vs. Ambient Temperature Figure 4. Forward Voltage vs. Ambient Temperature www.vishay.com 2 Document Number 83780 Rev. 2.0, 19-Jan-04 VISHAY TSKS5400-FSZ Vishay Semiconductors 100 Ie - Radiant Intensity ( mW/sr ) e rel - Relative Radiant Power 1.25 1.0 10 0.75 0.5 1 t p /T = 0.001 t p = 100 s 0.1 0.25 I F = 100 mA 0 900 950 - Wavelength ( nm ) 1000 0.01 10 0 94 7913 10 1 10 2 10 3 10 4 94 7994 I F - Forward Current ( mA ) Figure 5. Radiant Intensity vs. Forward Current Figure 8. Relative Radiant Power vs. Wavelength 0 I e rel - Relative Radiant Intensity 10 20 30 e - Radiant Power ( mW ) 100 40 1.0 0.9 0.8 0.7 50 60 70 80 10 1 0.1 1 13718 10 100 1000 14349 0.6 0.4 0.2 0 0.2 0.4 0.6 I F - Forward Current ( mA ) Figure 6. Radiant Power vs. Forward Current Figure 9. Relative Radiant Intensity vs. Angular Displacement 1.6 1.4 1.2 e rel I F = 10 mA 1.0 0.8 0.6 0.4 0.2 0.0 -45 -30 -15 0 15 30 45 60 75 90 I e rel ; 14348 Tamb - Ambient Temperature ( C ) Figure 7. Relative Radiant Intensity vs. Ambient Temperature Document Number 83780 Rev. 2.0, 19-Jan-04 www.vishay.com 3 TSKS5400-FSZ Vishay Semiconductors Package Dimensions in mm VISHAY 14345 www.vishay.com 4 Document Number 83780 Rev. 2.0, 19-Jan-04 VISHAY Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to TSKS5400-FSZ Vishay Semiconductors 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 83780 Rev. 2.0, 19-Jan-04 www.vishay.com 5 |
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